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  1. Microstructure characteristics of LPBF&HIP fabricated graded composite transition joint between ferritic steel and austenitic stainless steel

    Graded composite transition joints (GCTJs) offer a promising alternative to conventional dissimilar metal welds (DMWs) by enabling smooth compositional and microstructural transitions. However, GCTJs fabricated solely through additive manufacturing (AM) face challenges such as heat accumulation, complex parameter control, and elemental segregation. In this study, we propose a novel approach that relies on AM to design a spatially graded structure in one alloy and then employs hot isostatic pressing (HIP) as a diffusion bonding method to join it with a second alloy. Here, this method combines the flexibility of AM with the powder net-shaping advantage of HIP. Specifically, a seriesmore » of closely packed austenitic stainless steel 304 conical structures were printed using laser powder bed fusion (LPBF) and then combined with ferritic steel P91 powder via HIP. By using electron backscatter diffraction (EBSD), electron probe microanalysis (EPMA), and transmission electron microscopy (TEM) techniques, the microstructure characteristics of the GCTJ of 304&P91, especially the interdiffusion zone (IDZ), have been systematically investigated. The microstructure at the interface transitions from austenite-ferrite (A+F) to austenite-martensite-ferrite (A+M+F), and finally to martensite-ferrite (M+F) due to diffusion. Additionally, the diffusion width between 304 and P91 increases with the volume fraction of P91. This unique design also ensures a gradual transition in both hardness and thermal expansion coefficient from 304 to P91, thereby enabling a smooth gradient in functional properties. Overall, this study proposes a novel approach for fabricating GCTJs and contributes to advancing design concepts in the field of dissimilar metal joining.« less
  2. Hot corrosion behavior of 304 & P91 graded composite transition joint under molten sulfate salts

    A novel graded composite transition joint (GCTJ) between AISI 304 stainless steel and ASTM A335 P91 steel, has been demonstrated remarkablely superior creep performance compared to the conventional dissimilar metal weldment (DMW) under equivalent conditions. However, this advance is challenged by hot corrosion under salt deposition at elevated temperatures. Here, this study investigates the hot corrosion behavior of 304&P91 GCTJ exposed to sulfate salts at 700°C. Compared to the 304 steel, corrosion attacks initiate in the P91 triangle, where the dual-phase microstructure of ferrite and tempered martensite significantly influences pitting initiation. Anodic dissolution mainly occurs within the tempered martensite duemore » to more vulnerable sites within the tempered martensite. With prolonged exposure, corrosion propagates across both phases, and the corrosion depth within the P91 triangle is related to the exposed surface area ratio between 304 and P91. Electrochemical analysis reveals the occurrence of galvanic corrosion between the 304 and P91, with a positive linear relationship between anodic dissolution current density (Ia) and the exposed surface area ratio between 304 and P91 in molten salts, further emphasizing the critical impact of this ratio on the corrosion severity in the P91 triangle. These findings underscore the importance of transition zone design optimization in mitigating localized corrosion.« less
  3. CALPHAD-based Bayesian optimization to accelerate alloy discovery for high-temperature applications

    Two crucial properties influencing the performance of high-temperature alloys are coefficient of thermal expansion (CTE) and phase constitution. It is desirable to have alloys with low CTE, which reduces CTE mismatch with the surface oxide and the likelihood of oxide spallation. Reducing the amount of brittle intermetallic phases such as Sigma (σ) enhances alloy ductility and processability. Here, we propose a multi-objective Bayesian Optimization (BO) model to simultaneously minimize CTE (at an operational temperature of 1150 °C) and Tσ (temperature when the Sigma phase completely dissolves in the metal matrix), properties which are obtained from high-throughput CALculation of PHAse Diagramsmore » (CALPHAD). The model successfully identifies several alloys with CTE ≤ 2 × 10–5/K and Tσ ≤ 500 °C by exploring just 7% of the nickel–chromium–cobalt–aluminum–iron (Ni–Cr–Co–Al–Fe) composition space. Such multi-objective alloy design frameworks can be used to inform additive manufacturing experiments and accelerate alloy discovery for high-temperature energy applications.« less
  4. Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography (in EN)

    A novel high energy implantation system has been successfully developed to fabricate 4H-SiC superjunction devices for medium and high voltage via implantation of dopant atoms with multi-energies ranging from 13 to 66 MeV. The significantly higher levels of energy used compared to conventional implantation processes, necessitates detailed characterization of the lattice damage caused by implantation. To achieve this by employing the novel high energy system, 4H-SiC wafer with 12 μm epilayers were blanket implanted by 13.8–65.7 MeV Al atoms. The lattice damages induced by the implantation were primarily characterized by Synchrotron X-ray Plane Wave Topography (SXPWT) and Reciprocal Space Mappingmore » (RSM). Topographs reveal fringe contrast akin to multiple asymmetric diffraction peaks with an angular separation of only 2″ (arcseconds) observed on rocking curves, indicating inhomogeneous strain distribution across the implanted layer. The strain profile of the implanted layer was extracted from the fringe contrast by applying Rocking-curve Analysis by Dynamical Simulation (RADS). In conclusion, the maximum strain value is similar to that measured on the RSM.« less
  5. Enhancing the accuracy and generality of the Debye–Grüneisen Model: Optimizing the volume dependence for accurate predictions across varied compositions

    In this work, we have introduced an optimized Debye-Grüneisen model that revolutionizes the determination of the Debye temperature and Grüneisen parameters. Unlike conventional methods, our model requires only the 0 K energy volume data for a material as input, eliminating the need to determine the bulk modulus and its pressure derivative, which often pose challenges due to numerical uncertainties. This unique feature sets our model apart from existing approaches and streamlines the process, enabling accurate predictions of thermal expansion behavior across various materials. To demonstrate its effectiveness, we showcase its excellent agreement with measured coefficients of thermal expansion (CTE) formore » the nickel-cobalt-chromium-aluminum-yttrium (Ni-Co-Cr-Al-Y) bond-coating system. Additionally, we apply our approach by conducting a high-throughput search for potential bond-coating materials among 90,000 compositions within the aluminum-cobalt-chromium-iron-nickel (Al-Co-Cr-Fe-Ni) system. From this extensive search, four compositions are synthesized, and the measured CTE values agree very well with theoretical predictions, hence validating our approach. In conclusion, the current optimized Debye-Grüneisen model combined with Density Functional Theory (DFT)-based thermodynamic database enables reliable and efficient high-throughput calculations of CTE of of a material without expensive phonon calculations.« less
  6. Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations (in EN)

    Silicon carbide as a wide bandgap semiconductor is of great research interest for its widespread deployment in a range of electronic and optoelectronic devices, particularly in power electronics. However, defects in silicon carbide crystals are still major concerns that is hampering the development of high-performance devices. X-ray topography, particularly using the synchrotron beam has been instrumental in characterizing and analyzing defect configurations in silicon carbide crystals to optimize crystal growth as well as understand the effect of defects on device performance. Here, in recent years, the use of ray-tracing simulation technique based on the orientation contrast mechanism to simulate contrastmore » of defects observed on actual X-ray topographs has proven to be an effective approach to investigate the nature of crystallographic defects in various semiconductors. This review discusses the principle of ray-tracing simulation and its application and modifications to incorporate the effects of surface relaxation and photoelectric absorption to better simulate different dislocations observed in 4H–SiC as well as 6H–SiC crystals of various orientations. The adaptation to weak beam topography and plane wave topography is also discussed. The application of ray-tracing simulation in dislocation characterization of silicon carbide of different polytypes is systematically reviewed including different types of dislocations observed in both off-axis wafers and axial-sliced samples through synchrotron X-ray topography under various beam conditions, recording geometries and reflections. The result of ray-tracing simulation is further utilized in other studies including the investigation of effective penetration depth of all types of dislocations lying on the basal plane on grazing-incidence X-ray topography.« less
  7. Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals

    Here, several 4° off-axis 4H-SiC wafers with several hundred microns of initial-stage growth by PVT method are investigated by Synchrotron Monochromatic Beam X-ray Topography (SMBXT). Defect behavior across the seed/newly grown layer interface are demonstrated. Comparison of early stage grown layers to seed sample indicates generation of threading edge dislocation (TED) and threading screw dislocation (TSD)/ threading mixed dislocation (TMD) pairs at the interface while most basal plane dislocations (BPDs) are deflected into TEDs. The (0001) facet of the crystal is already formed at early stage growth at the edge of the wafer and high nitrogen incorporation in facet leadsmore » to conditions favorable for nucleation and glide of Shockley/double Shockley faults with layers of 3C-SiC deposited on facet acting as nuclei. Unique-shaped dislocations are observed at early stage growth, which are caused by deflection of TSDs/TMDs and TEDs by macrosteps near the periphery of the sample and the subsequent glide of the a components. The effect of the quality of the seed surface before growth is manifested as randomly oriented arrays of pairs of TEDs and TSDs/TMDs on the as grown surface resulting from residual surface damage from scratches.« less
  8. Hot Corrosion Monitoring in Boilers Using a Nonlinear Estimator and Electrochemical Noise-Based Corrosion Sensors

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"Hu, Shanshan"

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